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| Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SC4561 x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg (Ta=25C) Ratings 50 50 5 50 200 150 -55 to +150 Unit V V V mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: AN Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 0.5 0.99 0.06 250 1.5 0.3 V MHz pF min 50 50 5 0.1 100 500 typ max Unit V V V A A Ratio between 2 elements +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 240 120 Ta=25C XN1509 IC -- VCE 60 VCE=10V 50 25C Ta=75C 40 -25C IC -- VBE Total power dissipation PT (mW) 200 100 Collector current IC (mA) 160 80 IB=300A 120 60 250A 200A 150A 100A Collector current IC (mA) 30 80 40 20 40 20 10 50A 0 0 40 80 120 160 0 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 600 VCE=10V 600 fT -- I E VCB=10V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 500 Ta=75C 400 25C -25C 300 Transition frequency fT (MHz) 10 30 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 25C Ta=75C Forward current transfer ratio hFE 500 400 300 200 200 -25C 100 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 6 Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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